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Specifications
SKU: 876503
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
| Parameter | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCEO | - | - | 50 | V |
| Collector-Base Voltage | VCBO | - | - | 60 | V |
| Emitter-Base Voltage | VEBO | - | - | 5 | V |
| Collector Current | IC | - | - | 100 | mA |
| Base Current | IB | - | - | 5 | mA |
| DC Current Gain | hFE | 110 | 800 | - | - |
| Transition Frequency | fT | - | 300 | - | MHz |
| Power Dissipation | PD | - | - | 625 | mW |
| Operating Temperature | Toper | -55 | - | 150 | °C |
| Storage Temperature | Tstg | -65 | - | 200 | °C |
Instructions for Using BC549:
- Polarity Check: Ensure the correct polarity is used to avoid damage. The BC549 is an NPN transistor.
- Heat Dissipation: Do not exceed the maximum power dissipation (625 mW). Use a heatsink if necessary for high-power applications.
- Voltage Limits: Do not exceed the maximum voltages (VCEO: 50V, VCBO: 60V, VEBO: 5V) to prevent breakdown or damage.
- Current Limits: Ensure that the collector current (IC) does not exceed 100 mA and the base current (IB) does not exceed 5 mA.
- Operating Temperature: Operate within the temperature range of -55°C to 150°C. Store the device between -65°C and 200°C.
- Biasing: Properly bias the transistor to ensure it operates in the desired region (cut-off, active, saturation).
- Capacitance Considerations: Be aware of the parasitic capacitances that can affect high-frequency performance.
- Mounting: Handle with care to avoid mechanical stress which can affect performance and reliability.
- Soldering: Use appropriate soldering techniques to avoid thermal shock and damage to the device.
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