BUY IRF2807S https://www.utsource.net/itm/p/896701.html
HEXFET Power MOSFET
Description: The IRF2807S is a N-channel MOSFET with an advanced process technology. It has a maximum drain source voltage of 100V, a maximum drain current of 7.2A, and a maximum power dissipation of 75W. Features: Low on-resistance Low gate charge Low input and output capacitance Fast switching speed High avalanche energy RoHS compliant Applications: DC/DC converters Motor control Switching power supplies Battery powered systems Automotive applications (For reference only)