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2N4898

Specifications

SKU: 915108

BUY 2N4898 https://www.utsource.net/itm/p/915108.html
Trans GP BJT PNP 40V 1A 3-Pin(2+Tab) TO-66
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 300 V
Emitter-Base Voltage VEB - - 5 V
Collector-Base Voltage VCB - - 300 V
Collector Current IC - 150 300 mA
Base Current IB - - 30 mA
Power Dissipation PT - - 1000 mW
Junction Temperature TJ -25 - 150 °C
Storage Temperature TSTG -65 - 150 °C
Transition Frequency fT - 100 - MHz

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings specified to prevent damage.
    • Handle the device with care to avoid mechanical stress.
  2. Mounting:

    • Ensure proper heat dissipation if operating near maximum power dissipation.
    • Use appropriate mounting techniques to secure the device.
  3. Biasing:

    • Ensure that the base-emitter and base-collector junctions are properly biased to avoid reverse breakdown.
  4. Storage:

    • Store in a dry, cool environment to prevent moisture damage.
    • Keep away from high temperatures and direct sunlight.
  5. Testing:

    • Use a suitable multimeter or tester to verify the functionality of the transistor.
    • Test under controlled conditions to avoid accidental overvoltage or overcurrent.
  6. Soldering:

    • Use a soldering iron with a temperature not exceeding 300°C.
    • Limit soldering time to avoid thermal damage to the device.
  7. Circuit Design:

    • Design circuits to ensure that the transistor operates within its safe operating area (SOA).
    • Consider the thermal resistance and heatsink requirements for continuous operation.
(For reference only)

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