Specifications
SKU: 915108
Trans GP BJT PNP 40V 1A 3-Pin(2+Tab) TO-66
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 300 | V |
Emitter-Base Voltage | VEB | - | - | 5 | V |
Collector-Base Voltage | VCB | - | - | 300 | V |
Collector Current | IC | - | 150 | 300 | mA |
Base Current | IB | - | - | 30 | mA |
Power Dissipation | PT | - | - | 1000 | mW |
Junction Temperature | TJ | -25 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Transition Frequency | fT | - | 100 | - | MHz |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings specified to prevent damage.
- Handle the device with care to avoid mechanical stress.
Mounting:
- Ensure proper heat dissipation if operating near maximum power dissipation.
- Use appropriate mounting techniques to secure the device.
Biasing:
- Ensure that the base-emitter and base-collector junctions are properly biased to avoid reverse breakdown.
Storage:
- Store in a dry, cool environment to prevent moisture damage.
- Keep away from high temperatures and direct sunlight.
Testing:
- Use a suitable multimeter or tester to verify the functionality of the transistor.
- Test under controlled conditions to avoid accidental overvoltage or overcurrent.
Soldering:
- Use a soldering iron with a temperature not exceeding 300°C.
- Limit soldering time to avoid thermal damage to the device.
Circuit Design:
- Design circuits to ensure that the transistor operates within its safe operating area (SOA).
- Consider the thermal resistance and heatsink requirements for continuous operation.
Inquiry - 2N4898