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Specifications
SKU: 930447
NSC800TM High-Performance Low-Power CMOS Microprocessor
| Parameter | Description | Value |
|---|---|---|
| Part Number | NSC800N-3I | |
| Type | N-Channel Enhancement Mode MOSFET | |
| VDS (Max) | Drain-to-Source Voltage | 800V |
| VGS (Max) | Gate-to-Source Voltage | ±20V |
| ID (Max) | Continuous Drain Current (Tc = 25°C) | 3A |
| RDS(on) | On-State Resistance (VGS = 10V) | 1.5Ω |
| PTOT (Max) | Total Power Dissipation (Tc = 25°C) | 150W |
| fT | Transition Frequency | 1MHz |
| QG | Gate Charge | 50nC |
| QGD | Gate-Drain Charge | 15nC |
| QGS | Gate-Source Charge | 10nC |
| td(on) | Turn-On Delay Time | 40ns |
| tr | Rise Time | 70ns |
| td(off) | Turn-Off Delay Time | 50ns |
| tf | Fall Time | 80ns |
| Package | TO-220AB | |
| Operating Temperature | Junction Temperature (TJ) | -55°C to 150°C |
| Storage Temperature | Storage Temperature Range | -65°C to 175°C |
Instructions for Use:
Handling Precautions:
- Handle with care to avoid static damage.
- Use proper ESD protection when handling the device.
Mounting:
- Ensure proper heat sinking to manage power dissipation.
- Use a thermal compound between the device and the heatsink for better thermal conductivity.
Biasing:
- Apply gate voltage within the specified range to avoid damaging the gate oxide.
- Use appropriate gate drive circuits to ensure fast switching and minimize switching losses.
Operation:
- Do not exceed the maximum ratings for VDS, VGS, and ID.
- Monitor junction temperature to prevent overheating.
Testing:
- Use a suitable test setup to measure parameters like RDS(on) and QG.
- Follow standard testing procedures to ensure accurate measurements.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in original packaging until ready for use to protect from moisture and static.
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