Specifications
SKU: 998090
Transistor
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 400 | V |
Emitter-Base Voltage | VEB | -6 | - | 6 | V |
Collector Current | IC | - | - | 3 | A |
Base Current | IB | - | - | 0.3 | A |
Power Dissipation | PT | - | - | 65 | W |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use appropriate mounting hardware to secure the device.
Biasing:
- Apply base current (IB) to control the collector current (IC).
- Ensure that the base-emitter voltage (VEB) does not exceed the maximum rating.
Operating Conditions:
- Do not exceed the maximum collector-emitter voltage (VCE) to avoid breakdown.
- Keep the power dissipation (PT) within the specified limit to prevent thermal damage.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Avoid exposure to extreme temperatures outside the storage temperature range.
Handling:
- Handle with care to avoid mechanical damage.
- Use appropriate ESD protection to prevent electrostatic discharge damage.
Testing:
- Use a suitable test setup to verify the parameters before installation.
- Ensure that all connections are secure and free from short circuits.
Safety:
- Follow all safety guidelines and regulations when handling and operating the device.
- Use appropriate personal protective equipment (PPE) as necessary.
Inquiry - 2SD551