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2SD551

Specifications

SKU: 998090

BUY 2SD551 https://www.utsource.net/itm/p/998090.html
Transistor
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCE - - 400 V
Emitter-Base Voltage VEB -6 - 6 V
Collector Current IC - - 3 A
Base Current IB - - 0.3 A
Power Dissipation PT - - 65 W
Junction Temperature TJ -55 - 150 °C
Storage Temperature TSTG -65 - 150 °C

Instructions for Use:

  1. Mounting:

    • Ensure proper heat sinking to maintain junction temperature within specified limits.
    • Use appropriate mounting hardware to secure the device.
  2. Biasing:

    • Apply base current (IB) to control the collector current (IC).
    • Ensure that the base-emitter voltage (VEB) does not exceed the maximum rating.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (VCE) to avoid breakdown.
    • Keep the power dissipation (PT) within the specified limit to prevent thermal damage.
  4. Storage:

    • Store the device in a dry, cool environment to prevent moisture damage.
    • Avoid exposure to extreme temperatures outside the storage temperature range.
  5. Handling:

    • Handle with care to avoid mechanical damage.
    • Use appropriate ESD protection to prevent electrostatic discharge damage.
  6. Testing:

    • Use a suitable test setup to verify the parameters before installation.
    • Ensure that all connections are secure and free from short circuits.
  7. Safety:

    • Follow all safety guidelines and regulations when handling and operating the device.
    • Use appropriate personal protective equipment (PPE) as necessary.
(For reference only)

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