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BL12A

Specifications

SKU: 1162304

BUY BL12A https://www.utsource.net/itm/p/1162304.html

Parameter Description Value
Part Number Component Identifier BL12A
Type Device Type Bipolar Transistor
Polarity NPN or PNP NPN
VCEO Collector-Emitter Voltage 120V
VCBO Collector-Base Voltage 150V
VEBO Emitter-Base Voltage 5V
IC Continuous Collector Current 1.5A
PTOT Total Power Dissipation 65W
fT Transition Frequency 300MHz
hFE DC Current Gain 100 - 400
Package Enclosure Type TO-220
Operating Temp. Temperature Range -55°C to 150°C

Instructions for Use

  1. Mounting:

    • Ensure the transistor is mounted on a heatsink if operating near its maximum power dissipation.
    • Use thermal compound between the transistor and heatsink for better heat transfer.
  2. Polarity:

    • Connect the emitter (E) to the negative supply or ground.
    • Connect the base (B) to the control circuit.
    • Connect the collector (C) to the load and positive supply.
  3. Biasing:

    • For linear applications, bias the base to maintain the transistor in the active region.
    • For switching applications, ensure the base is driven sufficiently to saturate the transistor.
  4. Protection:

    • Use a base resistor to limit base current and prevent damage.
    • Consider adding a reverse-biased diode across the load to protect against inductive spikes.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Handle with care to avoid static damage.
  6. Testing:

    • Use a multimeter to test for continuity between the pins.
    • Ensure the transistor is not shorted or open before installation.
  7. Safety:

    • Always disconnect power before making any connections or modifications.
    • Follow all relevant safety guidelines and regulations.
(For reference only)

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