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Specifications
SKU: 1168839
64Mbit SDRAM
| Parameter | Description | Value |
|---|---|---|
| Device Name | 16M x 32-bit SDRAM | K4S641632D-TC80 |
| Package Type | FBGA (Fine Pitch Ball Grid Array) | 60-Ball |
| Supply Voltage (Vcc) | Operating voltage for the device | 3.3V |
| Operating Temperature Range | Temperature range for normal operation | -40°C to +85°C |
| Data Width | Number of bits transferred per cycle | 32 bits |
| Memory Capacity | Total memory storage capacity | 16 M x 32 bits (512 MB) |
| Access Time | Time required to access data from the memory | 8 ns |
| Row Address Strobe (tRAS) | Minimum active time for row address strobe | 45 ns |
| Column Address Strobe (tCAS) | Minimum time between column address strobe and data valid | 15 ns |
| Row Precharge Time (tRP) | Minimum time required for precharging a row before accessing another row | 15 ns |
| Row Active to Row Active (tRRD) | Minimum time between activating different rows in the same bank | 15 ns |
| Refresh Cycle Time (tRC) | Time required for one complete refresh cycle | 66 ns |
| Refresh Rate | Number of refresh cycles required per second | 7.8 μs (128K refresh) |
| Write Recovery Time (tWR) | Minimum time required after the last write command before precharge | 15 ns |
| Exit Self-Refresh Time (tXSR) | Time required to exit self-refresh mode | 75 ns |
| Power Down Exit Time (tXP) | Time required to exit power-down mode | 15 ns |
| Self-Refresh Entry Time (tSRE) | Time required to enter self-refresh mode | 15 ns |
| Power Consumption | Power consumption during active and idle states | Active: 1.8W, Idle: 0.3W |
Instructions for Use
Power Supply:
- Ensure that the supply voltage (Vcc) is stable at 3.3V.
- Connect Vss (ground) to a common ground reference.
Initialization:
- After power-up, initialize the SDRAM by sending a NOP (No Operation) command for at least 100 μs.
- Perform a precharge all command followed by a mode register set (MRS) command to configure the SDRAM.
Addressing:
- The SDRAM has 14 row address bits and 9 column address bits.
- Use the appropriate row and column addresses to access specific memory locations.
Commands:
- Active Command: Activates a row in the memory bank.
- Read/Write Command: Reads from or writes to the active row.
- Precharge Command: Precharges (deactivates) the current row.
- Auto Refresh Command: Refreshes the memory to maintain data integrity.
- Mode Register Set Command: Configures the mode register for various operating modes.
Refresh:
- Perform auto-refresh commands every 7.8 μs to ensure data retention.
- Alternatively, use the self-refresh mode to automatically handle refresh cycles when the device is idle.
Power Management:
- Use the power-down mode to reduce power consumption when the device is not in use.
- To exit power-down mode, send a NOP command followed by an active command.
Signal Integrity:
- Ensure proper termination of high-speed signals to avoid signal reflections and crosstalk.
- Use controlled impedance traces on the PCB to maintain signal integrity.
Testing:
- Verify the functionality of the SDRAM using a memory test pattern or a built-in self-test (BIST) feature if available.
By following these parameters and instructions, you can effectively integrate the K4S641632D-TC80 SDRAM into your design.
(For reference only)Inquiry - K4S641632D-TC80
