Specifications
SKU: 1201795
Power MOSFETVdss=500V, Rdson=0.190ohm, Id=23A
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 500 | - | V | - |
Gate-Source Voltage | VGS | -10 | - | 20 | V | - |
Continuous Drain Current | ID | - | 6.8 | - | A | TC = 25°C |
Continuous Drain Current | ID | - | 4.8 | - | A | TC = 100°C |
Pulse Drain Current | ID(peak) | - | 36 | - | A | tp = 10 ms, Duty Cycle ≤ 1% |
Total Power Dissipation | PTOT | - | 120 | - | W | TC = 25°C |
Junction Temperature | TJ | - | - | 175 | °C | - |
Storage Temperature Range | TSTG | -55 | - | 150 | °C | - |
Gate Charge | QG | - | 59 | - | nC | VGS = 15V, ID = 6.8A |
Input Capacitance | Ciss | - | 2400 | - | pF | VDS = 25V, f = 1 MHz |
Output Capacitance | Coss | - | 220 | - | pF | VDS = 25V, f = 1 MHz |
Reverse Transfer Capacitance | Crss | - | 130 | - | pF | VDS = 25V, f = 1 MHz |
On-State Resistance | RDS(on) | - | 0.55 | - | Ω | VGS = 10V, ID = 6.8A |
Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | ID = 250 μA |
Instructions for Use:
- Thermal Management: Ensure adequate heat sinking to manage the power dissipation, especially when operating at high currents or in high ambient temperatures.
- Gate Drive: Use a gate drive voltage between 10V and 15V for optimal performance. Avoid exceeding the maximum gate-source voltage (VGS) of 20V.
- Pulse Operation: For pulse operation, ensure that the pulse duration does not exceed 10 ms and the duty cycle is kept below 1% to avoid overheating.
- Storage and Handling: Store the device in a dry environment and handle with care to prevent damage from electrostatic discharge (ESD).
- Mounting: Use proper mounting techniques to ensure good thermal contact with the heatsink. Avoid excessive mechanical stress on the leads.
- Circuit Protection: Include appropriate circuit protection devices such as fuses and transient voltage suppressors to protect against overcurrent and voltage spikes.
- Capacitance Considerations: Account for the input, output, and reverse transfer capacitances when designing the switching circuit to minimize switching losses and ensure stable operation.
Inquiry - IRFP23N50L