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IKW25T120

Specifications

SKU: 1202175

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IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A
Description: IKW25T120 is a three-phase insulated gate bipolar transistor (IGBT) module from Infineon Technologies. Features: Low switching losses High current capability Low VCE(sat) Short circuit capability Low inductance Positive temperature coefficient High reliability Low noise High surge capability Applications: Motor control Uninterruptible power supplies Welding Solar inverters Power supplies Industrial drives Lighting ballast (For reference only)

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