BUY GT50J325 https://www.utsource.net/itm/p/1202218.html
IGBT Chip, N Channel, 600V, 2-21F2C, 3-Pin
Description: GT50J325 is a high power NPN silicon transistor manufactured by Toshiba. Features: High collector-emitter voltage: VCEO = 500V High collector current: IC = 5A Low collector-emitter saturation voltage: VCE(sat) = 0.5V High frequency: fT = 30MHz Low noise figure: NF = 1.5dB Application: GT50J325 is suitable for use in audio power amplifiers, high power switching applications, and other high power applications. (For reference only)