Specifications
SKU: 1223485
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 45 | V |
Collector-Base Voltage | VCBO | - | - | 60 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector Current | IC | - | - | 100 | mA |
Base Current | IB | - | - | 5 | mA |
DC Current Gain | hFE | 100 | 300 | 800 | - |
Transition Frequency | fT | - | 300 | - | MHz |
Power Dissipation | PT | - | - | 310 | mW |
Junction Temperature | TJ | -55 | - | 150 | °C |
Storage Temperature Range | TSTG | -65 | - | 150 | °C |
Instructions for Using BC850B:
Handling Precautions:
- Avoid exposing the transistor to high temperatures or mechanical stress.
- Use proper anti-static measures to prevent damage from electrostatic discharge (ESD).
Mounting:
- Ensure that the leads are bent carefully to avoid damaging the internal connections.
- Soldering temperature should not exceed 260°C for more than 10 seconds.
Biasing:
- For optimal performance, bias the base current (IB) to achieve the desired collector current (IC).
- Use a current-limiting resistor to protect the base-emitter junction from excessive current.
Operating Conditions:
- Ensure that the operating voltage and current do not exceed the maximum ratings.
- Keep the junction temperature within the specified range to avoid thermal runaway.
Storage:
- Store the transistors in a dry, cool place away from direct sunlight.
- Follow recommended storage conditions to maintain device reliability.
Testing:
- Use a multimeter or a transistor tester to verify the functionality of the transistor.
- Test the hFE (DC current gain) to ensure it falls within the typical range.
Applications:
- Suitable for general-purpose switching and amplification circuits.
- Ideal for use in low-power audio amplifiers, signal conditioning, and logic level conversion.
Inquiry - BC850B