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BC850B

Specifications

SKU: 1223485

BUY BC850B https://www.utsource.net/itm/p/1223485.html
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage VCEO - - 45 V
Collector-Base Voltage VCBO - - 60 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 100 mA
Base Current IB - - 5 mA
DC Current Gain hFE 100 300 800 -
Transition Frequency fT - 300 - MHz
Power Dissipation PT - - 310 mW
Junction Temperature TJ -55 - 150 °C
Storage Temperature Range TSTG -65 - 150 °C

Instructions for Using BC850B:

  1. Handling Precautions:

    • Avoid exposing the transistor to high temperatures or mechanical stress.
    • Use proper anti-static measures to prevent damage from electrostatic discharge (ESD).
  2. Mounting:

    • Ensure that the leads are bent carefully to avoid damaging the internal connections.
    • Soldering temperature should not exceed 260°C for more than 10 seconds.
  3. Biasing:

    • For optimal performance, bias the base current (IB) to achieve the desired collector current (IC).
    • Use a current-limiting resistor to protect the base-emitter junction from excessive current.
  4. Operating Conditions:

    • Ensure that the operating voltage and current do not exceed the maximum ratings.
    • Keep the junction temperature within the specified range to avoid thermal runaway.
  5. Storage:

    • Store the transistors in a dry, cool place away from direct sunlight.
    • Follow recommended storage conditions to maintain device reliability.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the functionality of the transistor.
    • Test the hFE (DC current gain) to ensure it falls within the typical range.
  7. Applications:

    • Suitable for general-purpose switching and amplification circuits.
    • Ideal for use in low-power audio amplifiers, signal conditioning, and logic level conversion.
(For reference only)

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