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2SA1602A

Specifications

SKU: 1225932

BUY 2SA1602A https://www.utsource.net/itm/p/1225932.html
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE SUPER MINI TYPE
Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 450 V
Collector-Base Voltage VCBO 500 V
Emitter-Base Voltage VEBO 8 V
Collector Current IC 15 A
Base Current IB 3 A
Power Dissipation PT 130 W
Junction Temperature TJ -55 to +150 °C
Storage Temperature TSTG -65 to +150 °C

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the high power dissipation.
    • Handle the transistor with care to avoid mechanical damage.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly.
    • Use appropriate wire gauges to handle the rated currents.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to ensure reliability.
  4. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature within the safe operating range.
    • Use thermal paste between the transistor and heat sink for better heat transfer.
  5. Testing:

    • Test the transistor under controlled conditions to verify its performance.
    • Use a multimeter or transistor tester to check for continuity and proper operation.
  6. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Avoid exposure to extreme temperatures and humidity.
  7. Safety Precautions:

    • Always disconnect power before making connections or performing tests.
    • Use protective equipment such as gloves and safety glasses when handling high-power components.
(For reference only)

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