Specifications
SKU: 1225932
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE SUPER MINI TYPE
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage | VCEO | 450 | V |
Collector-Base Voltage | VCBO | 500 | V |
Emitter-Base Voltage | VEBO | 8 | V |
Collector Current | IC | 15 | A |
Base Current | IB | 3 | A |
Power Dissipation | PT | 130 | W |
Junction Temperature | TJ | -55 to +150 | °C |
Storage Temperature | TSTG | -65 to +150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper heat sinking to manage the high power dissipation.
- Handle the transistor with care to avoid mechanical damage.
Electrical Connections:
- Connect the collector (C), base (B), and emitter (E) terminals correctly.
- Use appropriate wire gauges to handle the rated currents.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Operate within the specified temperature range to ensure reliability.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature within the safe operating range.
- Use thermal paste between the transistor and heat sink for better heat transfer.
Testing:
- Test the transistor under controlled conditions to verify its performance.
- Use a multimeter or transistor tester to check for continuity and proper operation.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Avoid exposure to extreme temperatures and humidity.
Safety Precautions:
- Always disconnect power before making connections or performing tests.
- Use protective equipment such as gloves and safety glasses when handling high-power components.
Inquiry - 2SA1602A