BUY IRG4BC20F https://www.utsource.net/itm/p/1230543.html
INSULATED GATE BIPOLAR TRANSISTORVces=600V, Vceontyp.=1.66V, @Vge=15V, Ic=9.0A
Description: This is an IGBT (Insulated Gate Bipolar Transistor) with a TO-220 package. It is manufactured by International Rectifier (IR). Features: Low gate charge Low on-state resistance High speed switching Low switching losses High surge current capability High short circuit capability Applications: Motor control Uninterruptible power supplies Switching power supplies AC and DC drives Lighting ballast control (For reference only)