BUY IRG4BC30UD https://www.utsource.net/itm/p/1230645.html
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODEVces=600V, Vceontyp.=1.95V, @Vge=15V, Ic=12A
Description: This is an Insulated Gate Bipolar Transistor (IGBT) module from International Rectifier (IR). Features: Low VCE(sat) Low switching losses High speed switching Low EMI High input impedance High current capability High voltage capability Low gate drive power Low thermal resistance Applications: Motor control Uninterruptible power supplies (UPS) Power supplies Automotive Lighting Industrial (For reference only)