Specifications
SKU: 1272246
x8 EPROM
Below is the parameter table and instructions for the HN27C256HG-85, a 32K x 8 UV Erasable PROM.
Parameter Table
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Supply Voltage | Vcc | 4.75 | 5.0 | 5.25 | V | Operating |
Output High Voltage | VOH | 2.4 | - | Vcc-0.5 | V | IOH = -0.4 mA, Vcc = 5.0V |
Output Low Voltage | VOL | 0.0 | - | 0.4 | V | IOL = 8.0 mA, Vcc = 5.0V |
Input High Voltage | VIH | 2.0 | - | Vcc | V | |
Input Low Voltage | VIL | 0.0 | - | 0.8 | V | |
Access Time | tAA | 0 | 85 | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Address Setup Time | tAS | 15 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Address Hold Time | tAH | 10 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Chip Enable Setup Time | tCES | 15 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Chip Enable Hold Time | tCEH | 10 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Output Enable Setup Time | tOES | 15 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Output Enable Hold Time | tOEH | 10 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Write Enable Setup Time | tWES | 15 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Write Enable Hold Time | tWEH | 10 | - | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Data Output Delay Time | tDO | 0 | 85 | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Data Output High-Z Time | tHZ | 0 | 15 | - | ns | Vcc = 5.0V, Ta = 0 to 70°C |
Power Dissipation | PD | - | 100 | - | mW | Vcc = 5.0V, Ta = 0 to 70°C |
Instructions
Power Supply:
- Ensure the supply voltage (Vcc) is within the range of 4.75V to 5.25V.
- Connect Vcc to the appropriate pin and GND to the ground pin.
Addressing:
- Apply the desired address to the address lines (A0-A14) before the access time (tAA).
- Maintain the address setup time (tAS) and hold time (tAH) as specified.
Chip Enable (CE):
- Set CE low to enable the device.
- Ensure the chip enable setup time (tCES) and hold time (tCEH) are met.
Output Enable (OE):
- Set OE low to enable data output.
- Ensure the output enable setup time (tOES) and hold time (tOEH) are met.
Write Enable (WE):
- Set WE low to initiate a write operation.
- Ensure the write enable setup time (tWES) and hold time (tWEH) are met.
Data Output:
- Data will be available on the data lines (D0-D7) after the data output delay time (tDO).
- The data output high-Z time (tHZ) should be considered when disabling the output.
Temperature Range:
- The device operates within a temperature range of 0°C to 70°C.
Programming:
- Use a compatible programmer to program the device.
- Follow the programming algorithm provided by the manufacturer.
Erase:
- Expose the device to UV light for the recommended erase time to clear the memory contents.
Storage:
- Store the device in a dry, cool place away from direct sunlight and static electricity.
By following these parameters and instructions, you can ensure reliable operation of the HN27C256HG-85 UV Erasable PROM.
(For reference only)Inquiry - HN27C256HG-85