Instructions for Use:

1. Mounting:

   • Ensure proper heat sinking to maintain junction temperature within specified limits.
   • Use appropriate mounting hardware to secure the transistor.

2. Biasing:

   • Apply base current (IB) carefully to avoid exceeding the maximum base current limit.
   • Ensure the collector current (IC) does not exceed the maximum rating.

3. Operation:

   • Do not exceed the maximum collector-emitter voltage (VCEO), collector-base voltage (VCBO), or emitter-base voltage (VEBO).
   • Monitor the power dissipation (PD) to prevent thermal runaway.

4. Storage:

   • Store the transistor in a dry, cool environment within the storage temperature range (-55°C to 150°C).

5. Handling:

   • Handle with care to avoid mechanical damage.
   • Use appropriate ESD protection to prevent damage from static electricity.

6. Testing:

   • Test the transistor under controlled conditions to ensure it meets the specified parameters.
   • Refer to the datasheet for detailed testing procedures and recommended test circuits.