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BD140-16

Specifications

SKU: 1351089

BUY BD140-16 https://www.utsource.net/itm/p/1351089.html
Complementary low voltage transistor
Parameter Symbol Value Unit
Collector-Emitter Voltage VCE 80 V
Emitter-Base Voltage VEB 5 V
Collector-Base Voltage VCB 80 V
Continuous Collector Current IC 1.5 A
Pulse Collector Current (t = 1 ms) ICM 3 A
Power Dissipation PT 62.5 W
Junction Temperature TJ -55 to 150 °C
Storage Temperature TSTG -55 to 150 °C
Thermal Resistance (Junction to Case) RthJC 1.5 °C/W

Instructions for BD140-16:

  1. Mounting:

    • Ensure proper heat sinking if operating at high power levels.
    • Use a thermal compound between the transistor and the heatsink to improve thermal conductivity.
  2. Biasing:

    • Set the base current (IB) to ensure the transistor operates in the desired region (cut-off, active, or saturation).
    • Avoid exceeding the maximum base-emitter voltage (VEB).
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (VCE), collector-base voltage (VCB), or emitter-base voltage (VEB).
    • Keep the junction temperature (TJ) within the specified range to avoid damage.
  4. Storage:

    • Store in a dry, cool place to prevent moisture damage.
    • Handle with care to avoid mechanical stress on the leads and body.
  5. Testing:

    • Use a multimeter or transistor tester to check the continuity and resistance between the leads.
    • Ensure the transistor is not damaged by checking for short circuits or open circuits.
  6. Soldering:

    • Preheat the PCB to reduce thermal shock.
    • Use a soldering iron with a temperature of around 300°C to 350°C.
    • Avoid overheating the transistor during soldering to prevent damage to the junction.
(For reference only)

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