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Specifications
SKU: 1361996
Small Signal Field-Effect Transistor, N-Channel, Silicon, Junction FET, DIE
| Parameter | Description | Value |
|---|---|---|
| Type | Component Type | Bipolar Transistor |
| Polarity | Transistor Polarity | NPN |
| VCEO | Collector-Emitter Voltage (Max) | 45 V |
| VCBO | Collector-Base Voltage (Max) | 50 V |
| VEBO | Emitter-Base Voltage (Max) | 6 V |
| IC | Continuous Collector Current (Max) | 800 mA |
| PTOT | Total Power Dissipation (Max) | 625 mW |
| fT | Transition Frequency | 300 MHz |
| hFE | DC Current Gain (Min/Typ/Max) | 100/300/600 |
| Package | Package Type | SOT-23 |
| Operating Temp. | Operating Temperature Range | -55°C to +150°C |
| Storage Temp. | Storage Temperature Range | -65°C to +150°C |
Instructions for Use:
Handling:
- Handle the J412 with care to avoid static damage.
- Use appropriate ESD protection measures when handling.
Mounting:
- Ensure proper heat dissipation if operating near maximum power ratings.
- Use a heatsink if necessary, especially for continuous high-power applications.
Soldering:
- Use a temperature-controlled soldering iron and keep the soldering time as short as possible.
- Avoid excessive heat to prevent damage to the component.
Circuit Design:
- Ensure that the operating conditions do not exceed the maximum ratings.
- Use bypass capacitors to stabilize the power supply and reduce noise.
Testing:
- Test the transistor in a controlled environment to ensure it meets the specified parameters.
- Use a multimeter or a transistor tester to verify the functionality.
Storage:
- Store the J412 in a dry, cool place away from direct sunlight.
- Keep the components in their original packaging until ready for use.
Inquiry - J412
