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Specifications
SKU: 1367395
| Parameter | Symbol | Min | Typ | Max | Unit | Description |
|---|---|---|---|---|---|---|
| Blocking Voltage | VBR(DSS) | - | 1200 | - | V | Drain-to-Source Breakdown Voltage |
| Continuous Drain Current | ID(DC) | - | 36 | - | A | Continuous Drain Current at TC = 25°C |
| Pulse Drain Current | ID(M) | - | 108 | - | A | Pulse Drain Current (tp = 10 μs) |
| Gate Threshold Voltage | VGS(th) | 2.0 | 4.0 | 6.0 | V | Gate Threshold Voltage |
| On-State Resistance | RDS(on) | - | 0.75 | - | Ω | On-State Resistance at VGS = 15 V |
| Total Power Dissipation | PTOT | - | 240 | - | W | Total Power Dissipation at TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | Maximum Junction Temperature |
| Storage Temperature Range | TSTG | -55 | - | 150 | °C | Storage Temperature Range |
Instructions for FU120N:
Handling Precautions:
- Use proper ESD protection when handling the device.
- Avoid exposing the device to excessive mechanical stress or moisture.
Mounting:
- Ensure good thermal management by using appropriate heatsinks.
- Apply thermal paste between the device and the heatsink for better heat dissipation.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Ensure the junction temperature does not exceed 175°C.
- Keep the storage temperature within the specified range (-55°C to 150°C).
Gate Drive:
- Use a gate resistor to limit the current during turn-on and turn-off.
- Ensure the gate voltage is within the specified range to avoid damage to the gate oxide.
Testing:
- Use a suitable test setup to measure parameters like VBR(DSS), ID(DC), and RDS(on).
- Follow safety guidelines to prevent electrical hazards.
Storage:
- Store the device in a dry, cool place away from direct sunlight.
- Use anti-static bags for long-term storage.
Soldering:
- Use a controlled soldering process with temperatures not exceeding 260°C for a duration of 10 seconds.
- Allow the device to cool down naturally after soldering.
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