BUY 957B https://www.utsource.net/itm/p/1369838.html
SILICON PNP EPITAXIAL TRANSISTOR
Description: NPN Darlington Transistor Features: High DC Current Gain (hFE = 1000) Low Collector-Emitter Saturation Voltage (VCE(sat) = 0.3V typ.) High Breakdown Voltage (BVCEO = 80V) Low Noise (NF = 0.3dB typ.) High Frequency Response (fT = 5MHz typ.) Available in SOP-8 Package Applications: Audio Amplifiers Motor Control Switching Regulators General Purpose Amplifiers (For reference only)