Specifications
SKU: 1377923
Silicon P-Channel MOS FET
2SJ117 is a P-Channel silicon MOSFET with HITACHI as the manufacturer. It is a TO-220 package device with three pins. Description: The 2SJ117 is a P-channel Silicon MOSFET designed for low-noise and low-distortion audio amplifiers. It has a maximum drain current of 4A, a maximum drain-source voltage of 30V, and a maximum gate-source voltage of 20V. It is suitable for high-frequency switching, power supply, and high-frequency circuit applications. Features: High input impedance Low on-resistance Low gate charge Superior dV/dt capability Avalanche Energy Rated High Current Drive Capability Applications: Voltage Regulators Power Supplies DC-DC converters Audio Amplifiers High-Frequency Switching (For reference only)
Inquiry - 2SJ117