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MJE13007A

Specifications

SKU: 1378007

BUY MJE13007A https://www.utsource.net/itm/p/1378007.html
Silicon NPN Switching TransistorNPN
Parameter Symbol Min Typ Max Unit Conditions
Collector-Emitter Voltage VCE - - 200 V -
Emitter-Base Voltage VEB - - 5 V -
Collector Current IC - - 1.5 A -
Base Current IB - - 0.15 A -
Power Dissipation PT - - 65 W -
Storage Temperature TSTG -65 - 150 °C -
Operating Temperature TA -65 - 150 °C -
DC Current Gain hFE 25 100 400 - IC = 150mA, VCE = 5V
Transition Frequency fT - 15 - MHz -

Instructions for Using MJE13007A:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings to prevent damage.
    • Use appropriate heat sinks when operating at high power levels.
    • Handle with care to avoid static discharge.
  2. Mounting:

    • Ensure proper alignment of the transistor leads during soldering.
    • Use a thermal compound between the transistor and heat sink for better heat dissipation.
  3. Biasing:

    • Ensure the base current is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
    • Use resistors to limit base current and protect the transistor from overdrive.
  4. Testing:

    • Measure the collector-emitter voltage and collector current to verify the transistor is functioning correctly.
    • Check the base-emitter voltage to ensure it is within the specified range.
  5. Storage:

    • Store in a dry, cool place away from direct sunlight.
    • Keep in anti-static packaging to prevent damage from static electricity.
  6. Applications:

    • Suitable for power amplifiers, switching circuits, and other high-power applications.
    • Ideal for use in automotive, industrial, and consumer electronics.
(For reference only)

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