Specifications
SKU: 1378007
Silicon NPN Switching TransistorNPN
Parameter | Symbol | Min | Typ | Max | Unit | Conditions |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCE | - | - | 200 | V | - |
Emitter-Base Voltage | VEB | - | - | 5 | V | - |
Collector Current | IC | - | - | 1.5 | A | - |
Base Current | IB | - | - | 0.15 | A | - |
Power Dissipation | PT | - | - | 65 | W | - |
Storage Temperature | TSTG | -65 | - | 150 | °C | - |
Operating Temperature | TA | -65 | - | 150 | °C | - |
DC Current Gain | hFE | 25 | 100 | 400 | - | IC = 150mA, VCE = 5V |
Transition Frequency | fT | - | 15 | - | MHz | - |
Instructions for Using MJE13007A:
Handling Precautions:
- Avoid exceeding the maximum ratings to prevent damage.
- Use appropriate heat sinks when operating at high power levels.
- Handle with care to avoid static discharge.
Mounting:
- Ensure proper alignment of the transistor leads during soldering.
- Use a thermal compound between the transistor and heat sink for better heat dissipation.
Biasing:
- Ensure the base current is sufficient to keep the transistor in the desired operating region (saturation, active, or cutoff).
- Use resistors to limit base current and protect the transistor from overdrive.
Testing:
- Measure the collector-emitter voltage and collector current to verify the transistor is functioning correctly.
- Check the base-emitter voltage to ensure it is within the specified range.
Storage:
- Store in a dry, cool place away from direct sunlight.
- Keep in anti-static packaging to prevent damage from static electricity.
Applications:
- Suitable for power amplifiers, switching circuits, and other high-power applications.
- Ideal for use in automotive, industrial, and consumer electronics.
Inquiry - MJE13007A