Specifications
SKU: 1467121
N-CHANNEL SILICON POWER MOSFET
Parameter | Symbol | Value | Unit |
---|---|---|---|
Drain-Source Voltage | V(DS) | 600 | V |
Gate-Source Voltage | V(GS) | ±20 | V |
Continuous Drain Current | I(D) | 15 | A |
Pulse Drain Current (t = 10 μs, Duty = 1/100) | I(DM) | 60 | A |
Power Dissipation | P(TOT) | 240 | W |
Junction Temperature | T(J) | -55 to +175 | °C |
Storage Temperature | T(STG) | -55 to +150 | °C |
Thermal Resistance, Junction to Case | R(θJC) | 0.8 | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use recommended mounting torque for screws to avoid damage.
Biasing:
- Apply gate-source voltage (V(GS)) within the specified range to prevent gate oxide breakdown.
- Ensure that the drain-source voltage (V(DS)) does not exceed the maximum rating to avoid device failure.
Current Handling:
- Do not exceed the continuous drain current (I(D)) or pulse drain current (I(DM)) ratings.
- For pulse applications, ensure that the duty cycle and pulse duration are within the specified limits.
Thermal Management:
- Monitor the junction temperature (T(J)) to ensure it stays within the operational range.
- Use appropriate cooling methods such as forced air or liquid cooling if necessary.
Storage:
- Store the device in a dry, cool environment with temperatures between -55°C and +150°C.
- Avoid exposure to corrosive environments or excessive humidity.
Handling:
- Handle the device with care to avoid mechanical stress.
- Use anti-static precautions to prevent damage from electrostatic discharge (ESD).
Testing:
- Perform initial testing under controlled conditions to verify performance parameters.
- Regularly inspect the device for signs of wear or damage during operation.
Compliance:
- Ensure compliance with relevant safety and regulatory standards for your application.
- Refer to the datasheet for additional information and specific application notes.
Inquiry - 2SK3752-01R