BUY SGD02N120 https://www.utsource.net/itm/p/1479727.html
Fast S-IGBT in NPT-technology NPTS-IGBT
Description: The SGD02N120 is a N-channel MOSFET from Infineon Technologies. It is a low-voltage, low-on-resistance, low-gate-charge device. Features: Low on-resistance Low gate charge Low input capacitance Low threshold voltage Low output capacitance High avalanche energy High temperature operation High switching speed Applications: DC-DC converters Motor control Power management Switching power supplies Uninterruptible power supplies Automotive applications (For reference only)