BUY SPB11N60C3 https://www.utsource.net/itm/p/1479756.html
N-Channel MOSFETs >500V…900V; Package: PG-TO263-3; VDS max: 600.0 V; Package: D2PAK TO-263; RDSON @ TJ=25°C VGS=10: 380.0 mOhm; IDmax @ TC=25°C: 11.0 A; IDpuls max: 33.0 A;
Description: SPB11N60C3 is a N-channel MOSFET manufactured by Infineon Technologies. It is a high-voltage, high-speed, low-on-resistance device. Features: Maximum drain source voltage of 600V Maximum drain current of 11A Maximum gate threshold voltage of 2.2V Maximum power dissipation of 43W Operating temperature range of -55°C to 150°C Applications: SPB11N60C3 is suitable for a wide range of applications, including motor control, power supplies, lighting, and other power switching applications. It is also suitable for high-frequency switching applications such as DC/DC converters and AC/DC converters. (For reference only)