Specifications
SKU: 1481050
Semiconductor Selection Guide 1995
Parameter | Symbol | Value | Unit |
---|---|---|---|
Collector-Emitter Voltage (Max) | VCEO | 400 | V |
Collector-Base Voltage (Max) | VCBO | 500 | V |
Emitter-Base Voltage (Max) | VEBO | 5 | V |
Collector Current (Max) | IC | 10 | A |
Base Current (Max) | IB | 1 | A |
Power Dissipation (Max) | Ptot | 125 | W |
Junction Temperature (Max) | Tj | 150 | °C |
Storage Temperature Range | Tstg | -55 to 150 | °C |
Transition Frequency | ft | 3 | MHz |
Instructions for Use:
Mounting and Handling:
- Handle the 2SD1020 with care to avoid mechanical stress.
- Ensure proper heat sinking to manage power dissipation, especially when operating near maximum ratings.
Electrical Connections:
- Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
- Use appropriate wire gauges to handle the current levels specified.
Operating Conditions:
- Do not exceed the maximum ratings listed in the table.
- Operate within the specified temperature range to ensure reliable performance.
Thermal Management:
- Ensure adequate cooling to keep the junction temperature below the maximum limit.
- Use thermal compound between the transistor and the heatsink for better heat transfer.
Storage:
- Store the 2SD1020 in a dry, cool place away from direct sunlight and extreme temperatures.
- Avoid exposure to corrosive environments.
Testing:
- Use a multimeter or a transistor tester to verify the functionality before installation.
- Test under controlled conditions to ensure all parameters are within specifications.
Safety Precautions:
- Always disconnect power before making connections or performing tests.
- Use appropriate personal protective equipment (PPE) when handling high-voltage circuits.
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