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2SD1020

Specifications

SKU: 1481050

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Semiconductor Selection Guide 1995
Parameter Symbol Value Unit
Collector-Emitter Voltage (Max) VCEO 400 V
Collector-Base Voltage (Max) VCBO 500 V
Emitter-Base Voltage (Max) VEBO 5 V
Collector Current (Max) IC 10 A
Base Current (Max) IB 1 A
Power Dissipation (Max) Ptot 125 W
Junction Temperature (Max) Tj 150 °C
Storage Temperature Range Tstg -55 to 150 °C
Transition Frequency ft 3 MHz

Instructions for Use:

  1. Mounting and Handling:

    • Handle the 2SD1020 with care to avoid mechanical stress.
    • Ensure proper heat sinking to manage power dissipation, especially when operating near maximum ratings.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly to avoid damage.
    • Use appropriate wire gauges to handle the current levels specified.
  3. Operating Conditions:

    • Do not exceed the maximum ratings listed in the table.
    • Operate within the specified temperature range to ensure reliable performance.
  4. Thermal Management:

    • Ensure adequate cooling to keep the junction temperature below the maximum limit.
    • Use thermal compound between the transistor and the heatsink for better heat transfer.
  5. Storage:

    • Store the 2SD1020 in a dry, cool place away from direct sunlight and extreme temperatures.
    • Avoid exposure to corrosive environments.
  6. Testing:

    • Use a multimeter or a transistor tester to verify the functionality before installation.
    • Test under controlled conditions to ensure all parameters are within specifications.
  7. Safety Precautions:

    • Always disconnect power before making connections or performing tests.
    • Use appropriate personal protective equipment (PPE) when handling high-voltage circuits.
(For reference only)

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