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6MBP100NA-060

Specifications

SKU: 1523716

BUY 6MBP100NA-060 https://www.utsource.net/itm/p/1523716.html
IGBT-IPM
Parameter Symbol Min Typ Max Unit Conditions
Rated Voltage VDS - 600 - V
Rated Current IT(AV) - 100 - A Tj = 25°C
Continuous Drain Current ID - 100 - A Tj = 25°C
On-State Resistance RDS(on) - 1.8 - VGS = 15V, ID = 100A, Tj = 25°C
Gate Charge QG - 140 - nC VDS = 400V, ID = 100A, VGS = ±15V
Input Capacitance Ciss - 3900 - pF VDS = 400V, f = 1MHz
Output Capacitance Coss - 700 - pF VDS = 400V, f = 1MHz
Reverse Transfer Capacitance Crss - 200 - pF VDS = 400V, f = 1MHz
Maximum Power Dissipation Ptot - 1100 - W TC = 25°C
Junction Temperature Tj -55 - 175 °C
Storage Temperature Tstg -55 - 150 °C

Instructions:

  1. Handling Precautions:

    • Avoid exposing the device to excessive mechanical stress.
    • Use proper ESD (Electrostatic Discharge) protection when handling the device.
  2. Mounting and Soldering:

    • Ensure that the device is mounted on a suitable heatsink to maintain the junction temperature within the specified limits.
    • Follow the recommended soldering profile to avoid thermal shock and damage to the device.
  3. Operating Conditions:

    • Ensure that the operating voltage does not exceed the rated voltage (600V).
    • The continuous drain current should not exceed 100A at 25°C junction temperature.
    • Monitor the junction temperature to prevent it from exceeding 175°C.
  4. Gate Drive:

    • Use a gate drive circuit that can provide the necessary gate charge (QG) for reliable switching.
    • Ensure that the gate-to-source voltage (VGS) is within the recommended range to avoid overvoltage or undervoltage conditions.
  5. Capacitance Considerations:

    • Account for the input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in the design to optimize performance and minimize switching losses.
  6. Power Dissipation:

    • Calculate the power dissipation (Ptot) to ensure it remains within the maximum allowable limit (1100W) to prevent overheating and potential failure.
  7. Storage:

    • Store the device in a dry, cool environment with temperatures between -55°C and 150°C to maintain its reliability and performance.
(For reference only)

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