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Specifications
SKU: 1539241
ULTRAFAST RECTIFIER PDP ENERGY RECOVERY
| Parameter | Symbol | Min | Typical | Max | Unit | Condition |
|---|---|---|---|---|---|---|
| Breakdown Voltage | BV | - | - | 30 | V | VDS, ID = 250 μA |
| Continuous Drain Current | ID | - | 40 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 28 | - | A | TC = 70°C |
| Pulse Drain Current | ID(peak) | - | 160 | - | A | tp = 10 ms, TC = 25°C |
| Gate-Source Voltage | VGS | -10 | - | 10 | V | - |
| Drain-Source On-State Resistance | RDS(on) | - | 3.5 | - | mΩ | VGS = 10V, ID = 20A, TC = 25°C |
| Gate Charge | QG | - | 120 | - | nC | - |
| Input Capacitance | Ciss | - | 1650 | - | pF | VDS = 15V, f = 1 MHz |
| Output Capacitance | Coss | - | 400 | - | pF | VDS = 15V, f = 1 MHz |
| Reverse Transfer Capacitance | Crss | - | 1250 | - | pF | VDS = 15V, f = 1 MHz |
| Total Power Dissipation | PTOT | - | - | 280 | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 175 | °C | - |
Instructions for Use:
Mounting and Handling:
- Handle the device with care to avoid mechanical stress.
- Ensure proper heat sinking to manage power dissipation, especially during high current operations.
Electrical Connections:
- Connect the drain (D), source (S), and gate (G) terminals correctly.
- Use short and wide traces to minimize inductance and resistance in the circuit.
Gate Drive:
- Apply a gate-source voltage (VGS) within the specified range to ensure reliable operation.
- Use a gate resistor to control the switching speed and reduce electromagnetic interference (EMI).
Thermal Management:
- Monitor the junction temperature (TJ) to prevent overheating.
- Use thermal paste and heatsinks to improve heat dissipation.
Protection Circuits:
- Implement overvoltage and overcurrent protection circuits to safeguard the device.
- Consider using snubber circuits to suppress voltage spikes.
Storage and Packaging:
- Store the device in a dry, cool place to prevent moisture damage.
- Follow anti-static precautions to avoid damaging the device.
Testing:
- Perform initial testing at low power levels to verify correct operation.
- Gradually increase the power level while monitoring all parameters to ensure safe operation.
For more detailed information, refer to the datasheet provided by STMicroelectronics.
(For reference only)Inquiry - STTH40P03S
