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Specifications
SKU: 1558710
HEXFET Power MOSFETHEXFET MOS
| Parameter | Symbol | Min | Typical | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 30 | - | V | Continuous |
| Gate-Source Voltage | VGS | -15 | 0 | 10 | V | Continuous |
| Continuous Drain Current | ID | - | 14 | - | A | TC = 25°C, VDS = 30V, VGS = 10V |
| Pulse Drain Current | IDpeak | - | 28 | - | A | TC = 25°C, VDS = 30V, VGS = 10V, tp = 10ms, Duty Cycle = 1% |
| Power Dissipation | PD | - | 72 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature Range | TSTG | -65 | - | 150 | °C | - |
| Total Device Dissipation | PTOT | - | 72 | - | W | TA = 25°C, θJA = 1.5°C/W |
| Thermal Resistance, Junction to Ambient | θJA | - | 1.5 | - | °C/W | - |
| Thermal Resistance, Junction to Case | θJC | - | 0.5 | - | °C/W | - |
Instructions for Use:
Handling Precautions:
- The IRLR024 is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
- Avoid exceeding the maximum ratings specified in the table to prevent damage.
Mounting:
- Ensure proper thermal management by using a heatsink if necessary to keep the junction temperature within the specified range.
- Follow the recommended PCB layout guidelines to minimize parasitic inductances and improve performance.
Gate Drive:
- Apply a gate-source voltage (VGS) between 4V and 10V for optimal operation.
- Ensure the gate drive circuit can provide sufficient current to charge and discharge the gate capacitance quickly.
Operating Conditions:
- The continuous drain current (ID) and power dissipation (PD) are specified at a case temperature (TC) of 25°C. For higher temperatures, derate the current and power accordingly.
- For pulse operation, ensure that the pulse duration and duty cycle do not exceed the specified limits.
Storage:
- Store the device in a dry, cool environment within the storage temperature range (-65°C to 150°C).
Testing:
- When testing the device, use the conditions specified in the parameter table to ensure accurate results.
- Measure the drain-source on-state resistance (RDS(on)) at the specified test conditions.
Safety:
- Always follow safety guidelines when working with high voltages and currents.
- Ensure proper ventilation and cooling to prevent overheating.
Inquiry - IRLR024
