Share:


M48Z09-100PC1

Specifications

SKU: 1568712

BUY M48Z09-100PC1 https://www.utsource.net/itm/p/1568712.html
CMOS 8k X 8 Zeropower SRAM
Parameter Symbol Min Typ Max Unit
Operating Voltage Vcc 2.0 5.0 5.5 V
Standby Current ISB - 0.1 1.0 μA
Active Current IOP - 1.0 3.0 mA
Data Retention Time tDR - - 10 years
Write Cycle Time tWC - 5 10 ms
Erase/Program Cycle NWE - 100 100 k cycles
Operating Temperature TOPR -40 - 85 °C
Storage Temperature TSTG -55 - 125 °C

Instructions for Use:

  1. Power Supply:

    • Ensure the supply voltage (Vcc) is within the range of 2.0V to 5.5V.
    • Avoid exceeding the maximum voltage to prevent damage to the device.
  2. Current Consumption:

    • The standby current (ISB) should not exceed 1.0 μA.
    • The active current (IOP) should be between 1.0 mA and 3.0 mA during operation.
  3. Data Retention:

    • The device retains data for up to 10 years under normal operating conditions.
  4. Write Operations:

    • The write cycle time (tWC) is typically 5 ms but can take up to 10 ms.
    • Ensure that the device has sufficient time to complete write operations before performing read or other operations.
  5. Erase/Program Cycles:

    • The device supports up to 100,000 erase/program cycles.
    • Regularly monitor the number of cycles to avoid premature wear-out.
  6. Temperature Ranges:

    • The operating temperature (TOPR) range is from -40°C to 85°C.
    • The storage temperature (TSTG) range is from -55°C to 125°C.
    • Ensure the device is stored and operated within these temperature limits to maintain reliability.
  7. Handling:

    • Handle the device with care to avoid static discharge, which can damage the internal components.
    • Use appropriate ESD protection measures when handling and installing the device.
  8. Mounting:

    • Follow the recommended PCB layout guidelines to ensure proper mounting and electrical connections.
    • Ensure good thermal management to prevent overheating during operation.
(For reference only)

 Inquiry - M48Z09-100PC1