Specifications
SKU: 1568712
CMOS 8k X 8 Zeropower SRAM
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Operating Voltage | Vcc | 2.0 | 5.0 | 5.5 | V |
Standby Current | ISB | - | 0.1 | 1.0 | μA |
Active Current | IOP | - | 1.0 | 3.0 | mA |
Data Retention Time | tDR | - | - | 10 | years |
Write Cycle Time | tWC | - | 5 | 10 | ms |
Erase/Program Cycle | NWE | - | 100 | 100 | k cycles |
Operating Temperature | TOPR | -40 | - | 85 | °C |
Storage Temperature | TSTG | -55 | - | 125 | °C |
Instructions for Use:
Power Supply:
- Ensure the supply voltage (Vcc) is within the range of 2.0V to 5.5V.
- Avoid exceeding the maximum voltage to prevent damage to the device.
Current Consumption:
- The standby current (ISB) should not exceed 1.0 μA.
- The active current (IOP) should be between 1.0 mA and 3.0 mA during operation.
Data Retention:
- The device retains data for up to 10 years under normal operating conditions.
Write Operations:
- The write cycle time (tWC) is typically 5 ms but can take up to 10 ms.
- Ensure that the device has sufficient time to complete write operations before performing read or other operations.
Erase/Program Cycles:
- The device supports up to 100,000 erase/program cycles.
- Regularly monitor the number of cycles to avoid premature wear-out.
Temperature Ranges:
- The operating temperature (TOPR) range is from -40°C to 85°C.
- The storage temperature (TSTG) range is from -55°C to 125°C.
- Ensure the device is stored and operated within these temperature limits to maintain reliability.
Handling:
- Handle the device with care to avoid static discharge, which can damage the internal components.
- Use appropriate ESD protection measures when handling and installing the device.
Mounting:
- Follow the recommended PCB layout guidelines to ensure proper mounting and electrical connections.
- Ensure good thermal management to prevent overheating during operation.
Inquiry - M48Z09-100PC1