BUY NT2625N https://www.utsource.net/itm/p/1804025.html

Description: N-Channel Enhancement Mode Field Effect Transistor Features: - High voltage: VDS = 600V - Low on-resistance: RDS(ON) = 0.6Ω - Low gate charge: Qg = 10nC - Low input capacitance: Ciss = 690pF - Low threshold voltage: VGS(th) = 1.8V - High speed switching: tD(on) = 0.3μs - High avalanche energy: EAS = 40mJ Applications: - Switching applications - DC-DC converters - Motor control - Lighting control - High voltage switching applications (For reference only)