BUY BD708 https://www.utsource.net/itm/p/1812625.html
COMPLEMENTARY SILICON POWER TRANSISTORS
Description: NPN Darlington Transistor Features: High DC Current Gain: hFE = 1000 (Min) @ IC = 4.0A Low Saturation Voltage: VCE(sat) = 1.2V (Max) @ IC = 4.0A High DC Current Gain: hFE = 1000 (Min) @ IC = 4.0A Low Collector-Emitter Saturation Voltage: VCE(sat) = 1.2V (Max) @ IC = 4.0A High Collector-Emitter Breakdown Voltage: BVCEO = 80V (Min) High Power Dissipation: PD = 25W (Max) Applications: Motor Control Switching Applications Power Supplies Audio Amplifiers (For reference only)