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FP75R12KT3

Specifications

SKU: 1834529

BUY FP75R12KT3 https://www.utsource.net/itm/p/1834529.html
IGBT Modules up to 1200V PIM; Package: AG-ECONO3-1; IC max: 75.0 A; VCEsat typ: 1.7 V; Configuration: PIM Three Phase Input Rectifier; Technology: IGBT3 Fast; Housing: EconoPIM™ 3;
Description: The FP75R12KT3 is a three-phase, insulated-gate bipolar transistor (IGBT) module from EUPEC. Features: Maximum collector-emitter voltage of 1200V Maximum collector current of 75A Maximum junction temperature of 150°C Low switching losses High current carrying capacity Application: The FP75R12KT3 is suitable for use in motor control, welding, and other power conversion applications. It is also suitable for use in high-power switching applications. (For reference only)

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