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Specifications
SKU: 1835388
MegaMOS FET
Below is the parameter table and instructions for the IXTM10N100A MOSFET.
Parameter Table
| Parameter | Symbol | Min | Typ | Max | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | - | 1000 | - | V | - |
| Gate-Source Voltage | VGS | -15 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 10 | - | A | TC = 25°C |
| Continuous Drain Current | ID | - | 7.5 | - | A | TC = 100°C |
| Pulse Drain Current | ID(p) | - | 40 | - | A | tp = 10 μs, IG = 10 A |
| Gate Charge | QG | - | 120 | - | nC | VGS = 15 V |
| Input Capacitance | Ciss | - | 3500 | - | pF | VDS = 500 V |
| Output Capacitance | Coss | - | 160 | - | pF | VDS = 500 V |
| Reverse Transfer Capacitance | Crss | - | 200 | - | pF | VDS = 500 V |
| On-State Resistance | RDS(on) | - | 0.85 | - | Ω | VGS = 15 V, ID = 10 A |
| Threshold Voltage | VGS(th) | 2.5 | 3.5 | 4.5 | V | ID = 1 mA |
| Total Power Dissipation | PTOT | - | 110 | - | W | TC = 25°C |
| Junction Temperature | TJ | - | - | 150 | °C | - |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C | - |
Instructions
Handling and Storage:
- Store the device in a dry, cool place to avoid moisture damage.
- Handle with care to prevent static discharge, which can damage the device.
Mounting:
- Ensure proper heat sinking to manage the junction temperature, especially during high current operations.
- Use recommended mounting torque for the screws to ensure good thermal contact without damaging the device.
Biasing:
- Apply the gate-source voltage (VGS) within the specified limits to avoid gate oxide breakdown.
- Ensure that the gate-source voltage is stable and free from excessive noise to prevent spurious turn-on or turn-off.
Operation:
- Operate the device within the continuous drain current (ID) ratings to avoid overheating.
- For pulse applications, ensure that the pulse duration and current do not exceed the specified limits to prevent thermal stress.
Testing:
- Use appropriate test conditions as specified in the parameter table to accurately measure device parameters.
- Ensure that the test setup is safe and does not exceed the maximum ratings of the device.
Safety:
- Always follow safety guidelines when handling high-voltage and high-current circuits.
- Use protective equipment such as gloves and goggles when necessary.
By following these instructions, you can ensure reliable and efficient operation of the IXTM10N100A MOSFET.
(For reference only)Inquiry - IXTM10N100A
