Specifications
SKU: 1841043
NPN HIGH POWER SILICON TRANSISTOR
Parameter | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Drain-Source Voltage | VDS | - | 100 | - | V |
Gate-Source Voltage | VGS | -10 | - | 10 | V |
Continuous Drain Current | ID | - | 0.5 | - | A |
Pulse Drain Current | IDM | - | 2.5 | - | A |
Power Dissipation | PTOT | - | 1.25 | - | W |
Junction Temperature | TJ | - | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
Instructions for Use:
Handling Precautions:
- The JAN2N5912 is sensitive to electrostatic discharge (ESD). Use proper ESD protection when handling the device.
- Avoid exceeding the maximum ratings specified in the table to prevent damage to the component.
Mounting:
- Ensure that the mounting surface is clean and flat to ensure good thermal contact.
- Use a heat sink if necessary to manage power dissipation, especially in high-current applications.
Biasing:
- Apply the gate-source voltage (VGS) carefully to control the drain current (ID). The typical operating range for VGS is between -10V and 10V.
- Ensure that the drain-source voltage (VDS) does not exceed 100V to avoid breakdown.
Thermal Management:
- Monitor the junction temperature (TJ) to ensure it does not exceed 150°C. Use thermal management techniques such as heatsinks or forced air cooling if necessary.
Storage:
- Store the device in a dry, cool environment within the storage temperature range of -65°C to 150°C.
- Avoid exposing the device to excessive humidity or corrosive environments.
Testing:
- When testing the device, use a suitable test setup to avoid overloading the device with current or voltage.
- Verify the functionality of the device by checking its electrical parameters against the specifications provided.
Soldering:
- Use a soldering iron with a temperature-controlled tip to avoid overheating the device during soldering.
- Follow recommended soldering profiles to ensure reliable connections without damaging the component.
Inquiry - JAN2N5912