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2SB530

Specifications

SKU: 1849308

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INSTOCK
Parameter Symbol Min Typ Max Unit
Collector-Emitter Voltage (Reverse) V(BR)CEO - - 400 V
Emitter-Base Voltage (Reverse) V(BR)EBO - - 10 V
Collector Current (Continuous) IC - - 15 A
Collector Current (Pulse) ICM - - 30 A
Power Dissipation (Collector) Ptot - - 125 W
Junction Temperature TJ -20 - 150 °C
Storage Temperature TSTG -55 - 150 °C
Base-Emitter Saturation Voltage VBE(sat) 0.7 1.2 - V
Collector-Emitter Saturation Voltage VCE(sat) 0.7 1.5 - V
Forward Current Transfer Ratio hFE 10 70 100 -
Transition Frequency fT - 10 - MHz

Instructions for Use:

  1. Mounting and Handling:

    • Ensure proper heat sinking to manage the maximum power dissipation.
    • Handle the transistor with care to avoid mechanical damage.
  2. Electrical Connections:

    • Connect the collector (C), base (B), and emitter (E) terminals correctly.
    • Ensure that the collector-emitter voltage does not exceed 400V to prevent breakdown.
  3. Thermal Management:

    • The junction temperature should be kept below 150°C to ensure reliable operation.
    • Use a heatsink if the power dissipation is expected to be high.
  4. Current Limiting:

    • Do not exceed the continuous collector current of 15A or the pulse current of 30A.
    • Use appropriate current limiting resistors if necessary.
  5. Storage:

    • Store the transistor in a dry place within the temperature range of -55°C to 150°C.
  6. Saturation:

    • For optimal performance, keep the base-emitter saturation voltage between 0.7V and 1.2V.
    • Ensure the collector-emitter saturation voltage is within the specified range to minimize power loss.
  7. Frequency Considerations:

    • The transition frequency (fT) is typically around 10MHz. Design circuits accordingly to avoid instability at higher frequencies.
  8. Safety:

    • Always follow standard safety procedures when handling electronic components.
    • Ensure proper grounding and insulation to prevent electrical shock.
(For reference only)

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