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2N4101

Specifications

SKU: 1854150

BUY 2N4101 https://www.utsource.net/itm/p/1854150.html
5-A SILICON CONTROLLED RECTIFIERS
Parameter Symbol Min Typical Max Unit
Collector-Emitter Voltage VCEO - - 60 V
Collector-Base Voltage VCBO - - 70 V
Emitter-Base Voltage VEBO - - 5 V
Collector Current IC - - 200 mA
Base Current IB - - 5 mA
Power Dissipation PT - - 625 mW
Junction Temperature TJ -25 - 150 °C
Storage Temperature TSTG -65 - 150 °C
DC Current Gain hFE 10 100 300 -
Transition Frequency fT - 300 - MHz

Instructions for Use:

  1. Handling Precautions:

    • Avoid exceeding the maximum ratings to prevent damage.
    • Use proper static protection when handling the device.
  2. Mounting:

    • Ensure good thermal contact with the heat sink if high power dissipation is expected.
    • Use a suitable mounting method to avoid mechanical stress on the leads.
  3. Biasing:

    • Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damaging the base-emitter junction.
    • The collector current should be kept within the maximum limits to prevent overheating and potential failure.
  4. Operating Conditions:

    • Operate the device within the recommended temperature range to ensure reliable performance.
    • For high-frequency applications, consider the transition frequency (fT) to ensure the device operates efficiently.
  5. Storage:

    • Store the device in a dry, cool place to prevent degradation.
    • Avoid exposure to extreme temperatures and humidity.
  6. Testing:

    • Use appropriate test equipment to measure parameters such as hFE, VCEO, and IC.
    • Follow standard testing procedures to avoid damaging the device during testing.
(For reference only)

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