Specifications
SKU: 1854150
5-A SILICON CONTROLLED RECTIFIERS
Parameter | Symbol | Min | Typical | Max | Unit |
---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | - | - | 60 | V |
Collector-Base Voltage | VCBO | - | - | 70 | V |
Emitter-Base Voltage | VEBO | - | - | 5 | V |
Collector Current | IC | - | - | 200 | mA |
Base Current | IB | - | - | 5 | mA |
Power Dissipation | PT | - | - | 625 | mW |
Junction Temperature | TJ | -25 | - | 150 | °C |
Storage Temperature | TSTG | -65 | - | 150 | °C |
DC Current Gain | hFE | 10 | 100 | 300 | - |
Transition Frequency | fT | - | 300 | - | MHz |
Instructions for Use:
Handling Precautions:
- Avoid exceeding the maximum ratings to prevent damage.
- Use proper static protection when handling the device.
Mounting:
- Ensure good thermal contact with the heat sink if high power dissipation is expected.
- Use a suitable mounting method to avoid mechanical stress on the leads.
Biasing:
- Ensure that the base-emitter voltage (VBE) is within the specified range to avoid damaging the base-emitter junction.
- The collector current should be kept within the maximum limits to prevent overheating and potential failure.
Operating Conditions:
- Operate the device within the recommended temperature range to ensure reliable performance.
- For high-frequency applications, consider the transition frequency (fT) to ensure the device operates efficiently.
Storage:
- Store the device in a dry, cool place to prevent degradation.
- Avoid exposure to extreme temperatures and humidity.
Testing:
- Use appropriate test equipment to measure parameters such as hFE, VCEO, and IC.
- Follow standard testing procedures to avoid damaging the device during testing.
Inquiry - 2N4101