Specifications
SKU: 1864452
IGBT-Wechselrichter / IGBT-inverter
Parameter | Description | Value |
---|---|---|
Part Number | Full Part Number | FZ1200R33KF2C |
Type | Device Type | IGBT Module |
Package | Package Type | 62mm x 62mm x 14mm |
VCEO | Collector-Emitter Voltage (Max) | 1200 V |
IC | Continuous Collector Current (Max) | 33 A |
VGE | Gate-Emitter Voltage (Max) | ±20 V |
Tj | Junction Temperature Range | -40°C to +150°C |
Rth(j-c) | Thermal Resistance, Junction to Case | 0.25 K/W |
Eoss | Output Capacitance Energy | 78 nJ |
Qg | Total Gate Charge | 140 nC |
fsw | Switching Frequency | Up to 20 kHz |
VF | Forward Voltage Drop (Diode) | 1.7 V (at 33 A) |
IRM | Reverse Recovery Peak Current (Diode) | 120 A |
trr | Reverse Recovery Time (Diode) | 120 ns |
Instructions for Use:
Mounting and Handling:
- Ensure that the module is handled with care to avoid mechanical damage.
- Use appropriate thermal paste or thermal interface material between the module and the heat sink to ensure good thermal conductivity.
- Tighten the mounting screws to the recommended torque value to avoid excessive pressure on the module.
Electrical Connections:
- Connect the collector (C), emitter (E), and gate (G) terminals according to the circuit diagram.
- Ensure that the gate drive circuit provides the correct gate voltage (±20 V) and current to switch the IGBT on and off efficiently.
- Use short and low-inductance connections to minimize parasitic inductance effects.
Thermal Management:
- The module must be mounted on a suitable heat sink to dissipate the heat generated during operation.
- Monitor the junction temperature to ensure it does not exceed the maximum allowable temperature of 150°C.
- Consider forced air cooling or liquid cooling for high-power applications.
Protection Circuits:
- Implement overcurrent protection to prevent damage from excessive current.
- Use snubber circuits to suppress voltage transients and reduce electromagnetic interference (EMI).
- Ensure that the diode is capable of handling the reverse recovery current and time specified.
Storage:
- Store the module in a dry, cool place away from direct sunlight and sources of heat.
- Handle the module with ESD-protected equipment to prevent damage from static electricity.
Testing:
- Before installing the module in the final application, test it in a controlled environment to ensure it meets the required performance specifications.
- Use a curve tracer or similar device to verify the I-V characteristics and switching behavior.
By following these guidelines, you can ensure reliable and efficient operation of the FZ1200R33KF2C IGBT module.
(For reference only)Inquiry - FZ1200R33KF2C