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FZ1200R33KF2C

Specifications

SKU: 1864452

BUY FZ1200R33KF2C https://www.utsource.net/itm/p/1864452.html
IGBT-Wechselrichter / IGBT-inverter
Parameter Description Value
Part Number Full Part Number FZ1200R33KF2C
Type Device Type IGBT Module
Package Package Type 62mm x 62mm x 14mm
VCEO Collector-Emitter Voltage (Max) 1200 V
IC Continuous Collector Current (Max) 33 A
VGE Gate-Emitter Voltage (Max) ±20 V
Tj Junction Temperature Range -40°C to +150°C
Rth(j-c) Thermal Resistance, Junction to Case 0.25 K/W
Eoss Output Capacitance Energy 78 nJ
Qg Total Gate Charge 140 nC
fsw Switching Frequency Up to 20 kHz
VF Forward Voltage Drop (Diode) 1.7 V (at 33 A)
IRM Reverse Recovery Peak Current (Diode) 120 A
trr Reverse Recovery Time (Diode) 120 ns

Instructions for Use:

  1. Mounting and Handling:

    • Ensure that the module is handled with care to avoid mechanical damage.
    • Use appropriate thermal paste or thermal interface material between the module and the heat sink to ensure good thermal conductivity.
    • Tighten the mounting screws to the recommended torque value to avoid excessive pressure on the module.
  2. Electrical Connections:

    • Connect the collector (C), emitter (E), and gate (G) terminals according to the circuit diagram.
    • Ensure that the gate drive circuit provides the correct gate voltage (±20 V) and current to switch the IGBT on and off efficiently.
    • Use short and low-inductance connections to minimize parasitic inductance effects.
  3. Thermal Management:

    • The module must be mounted on a suitable heat sink to dissipate the heat generated during operation.
    • Monitor the junction temperature to ensure it does not exceed the maximum allowable temperature of 150°C.
    • Consider forced air cooling or liquid cooling for high-power applications.
  4. Protection Circuits:

    • Implement overcurrent protection to prevent damage from excessive current.
    • Use snubber circuits to suppress voltage transients and reduce electromagnetic interference (EMI).
    • Ensure that the diode is capable of handling the reverse recovery current and time specified.
  5. Storage:

    • Store the module in a dry, cool place away from direct sunlight and sources of heat.
    • Handle the module with ESD-protected equipment to prevent damage from static electricity.
  6. Testing:

    • Before installing the module in the final application, test it in a controlled environment to ensure it meets the required performance specifications.
    • Use a curve tracer or similar device to verify the I-V characteristics and switching behavior.

By following these guidelines, you can ensure reliable and efficient operation of the FZ1200R33KF2C IGBT module.

(For reference only)

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