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FQP50N60

Specifications

SKU: 1870025

BUY FQP50N60 https://www.utsource.net/itm/p/1870025.html
60V N-Channel MOSFET
Parameter Symbol Min Typical Max Unit Conditions
Drain-Source Voltage VDS - - 600 V -
Gate-Source Voltage VGS -20 - 20 V -
Continuous Drain Current ID - - 50 A TC = 25°C
Pulse Drain Current IDpeak - - 100 A tp = 10 ms, TC = 25°C
Power Dissipation PTOT - - 350 W TC = 25°C
Junction Temperature TJ - - 175 °C -
Storage Temperature TSTG -55 - 150 °C -
Thermal Resistance RθJC - 0.45 - °C/W -

Instructions for Use:

  1. Handling Precautions:

    • Handle the FQP50N60 with care to avoid damage to the leads and body.
    • Use ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.
  2. Mounting:

    • Ensure proper alignment of the device during mounting to avoid mechanical stress on the leads.
    • Use a heatsink if necessary to manage thermal dissipation, especially under high power conditions.
  3. Biasing:

    • Apply gate-source voltage (VGS) within the specified limits to avoid damaging the gate oxide.
    • Ensure the drain-source voltage (VDS) does not exceed the maximum rating to prevent breakdown.
  4. Current Limiting:

    • Do not exceed the continuous drain current (ID) or pulse drain current (IDpeak) ratings to avoid overheating and potential failure.
    • Use appropriate current limiting resistors if necessary.
  5. Thermal Management:

    • Monitor the junction temperature (TJ) to ensure it remains within the safe operating range.
    • Use thermal paste and heatsinks to improve heat dissipation.
  6. Storage:

    • Store the device in a dry, cool place away from direct sunlight and sources of heat.
    • Ensure storage temperatures are within the specified storage temperature range (TSTG).
  7. Testing:

    • Perform initial testing at low power levels to verify correct operation before applying full load conditions.
    • Use appropriate test equipment and follow safety guidelines to avoid injury or damage.
  8. Documentation:

    • Refer to the datasheet and application notes for detailed information and specific application guidance.
(For reference only)

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