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Specifications
SKU: 1881057
Power Bipolar Transistor, 10A I(C), 700V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FI(LS), 3 PIN
| Parameter | Symbol | Min | Typical | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage | Vceo | - | - | 100 | V |
| Collector-Base Voltage | Vcbo | - | - | 120 | V |
| Emitter-Base Voltage | Vebo | - | - | 5 | V |
| Collector Current | Ic | - | - | 15 | A |
| Base Current | Ib | - | - | 1.5 | A |
| Power Dissipation | Ptot | - | - | 125 | W |
| Junction Temperature | Tj | -20 | - | 150 | °C |
| Storage Temperature Range | Tstg | -55 | - | 150 | °C |
| Thermal Resistance | Rth(j-c) | - | 1.5 | - | °C/W |
Instructions for Use:
Mounting:
- Ensure proper heat sinking to maintain junction temperature within specified limits.
- Use thermal compound between the transistor and heat sink for optimal heat transfer.
Biasing:
- Set the base current (Ib) to ensure the transistor operates within its safe operating area (SOA).
- Avoid exceeding the maximum collector current (Ic) and power dissipation (Ptot).
Operating Conditions:
- Do not exceed the maximum ratings for collector-emitter voltage (Vceo), collector-base voltage (Vcbo), and emitter-base voltage (Vebo).
- Ensure the junction temperature (Tj) does not exceed 150°C.
Storage:
- Store the transistor in a dry environment within the storage temperature range (-55°C to 150°C).
Handling:
- Handle with care to avoid mechanical damage.
- Use appropriate ESD protection to prevent damage from static electricity.
Testing:
- Test the transistor under controlled conditions to verify performance parameters.
- Refer to the datasheet for detailed test circuits and procedures.
Inquiry - 2SC6090LS
