BUY BSM50GB170DN2 https://www.utsource.net/itm/p/1884267.html
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate)
Description: BSM50GB170DN2 is an insulated-gate bipolar transistor (IGBT) module manufactured by EUPEC. Features: Maximum collector-emitter voltage of 1700V Maximum collector current of 50A Maximum power dissipation of 600W Low on-state voltage drop Low switching losses High current capability High frequency operation Applications: BSM50GB170DN2 is suitable for use in applications such as motor drives, welding machines, UPS systems, and solar inverters. (For reference only)