Share:


BCT2827C

Specifications

SKU: 1886214

BUY BCT2827C https://www.utsource.net/itm/p/1886214.html

Parameter Symbol Conditions Min Typ Max Unit
Collector-Emitter Voltage VCEO IC = 0, IE = 0 - 30 - V
Emitter-Collector Voltage VEBO IB = 0, IC = 0 - 5 - V
Base-Emitter Voltage VBE IC = 100 mA, IE = 0 0.9 1.2 - V
Collector Current IC VCE = 5V - 100 - mA
Base Current IB VCE = 5V, IC = 100 mA 1 5 - mA
DC Current Gain hFE IC = 100 mA, VCE = 5V 100 300 - -
Power Dissipation PTOT TA = 25°C - 625 - mW
Operating Temperature Range TOP - -40 125 - °C
Storage Temperature Range TSTG - -65 150 - °C

Instructions for Use:

  1. Mounting:

    • Ensure proper handling to avoid static damage.
    • Mount the transistor with sufficient clearance from other components to allow for heat dissipation.
  2. Biasing:

    • Apply the base current (IB) carefully to control the collector current (IC).
    • Ensure that the base-emitter voltage (VBE) does not exceed the maximum rating.
  3. Operating Conditions:

    • Do not exceed the maximum collector-emitter voltage (VCEO).
    • Keep the power dissipation (PTOT) within the specified limits to prevent overheating.
    • Operate the transistor within the specified temperature range (TOP) to ensure reliable performance.
  4. Storage:

    • Store the transistor in a dry, cool place within the storage temperature range (TSTG).
  5. Testing:

    • Use appropriate test equipment to verify the transistor parameters before installation.
    • Test the transistor under controlled conditions to avoid damage.
  6. Soldering:

    • Use a soldering iron with a temperature no higher than 300°C.
    • Complete soldering within 10 seconds to avoid thermal stress on the transistor.
  7. Handling:

    • Handle the transistor by the body, not the leads, to minimize mechanical stress.
    • Use anti-static wrist straps and mats to prevent electrostatic discharge (ESD).
(For reference only)

 Inquiry - BCT2827C