Specifications
SKU: 1886214
Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
---|---|---|---|---|---|---|
Collector-Emitter Voltage | VCEO | IC = 0, IE = 0 | - | 30 | - | V |
Emitter-Collector Voltage | VEBO | IB = 0, IC = 0 | - | 5 | - | V |
Base-Emitter Voltage | VBE | IC = 100 mA, IE = 0 | 0.9 | 1.2 | - | V |
Collector Current | IC | VCE = 5V | - | 100 | - | mA |
Base Current | IB | VCE = 5V, IC = 100 mA | 1 | 5 | - | mA |
DC Current Gain | hFE | IC = 100 mA, VCE = 5V | 100 | 300 | - | - |
Power Dissipation | PTOT | TA = 25°C | - | 625 | - | mW |
Operating Temperature Range | TOP | - | -40 | 125 | - | °C |
Storage Temperature Range | TSTG | - | -65 | 150 | - | °C |
Instructions for Use:
Mounting:
- Ensure proper handling to avoid static damage.
- Mount the transistor with sufficient clearance from other components to allow for heat dissipation.
Biasing:
- Apply the base current (IB) carefully to control the collector current (IC).
- Ensure that the base-emitter voltage (VBE) does not exceed the maximum rating.
Operating Conditions:
- Do not exceed the maximum collector-emitter voltage (VCEO).
- Keep the power dissipation (PTOT) within the specified limits to prevent overheating.
- Operate the transistor within the specified temperature range (TOP) to ensure reliable performance.
Storage:
- Store the transistor in a dry, cool place within the storage temperature range (TSTG).
Testing:
- Use appropriate test equipment to verify the transistor parameters before installation.
- Test the transistor under controlled conditions to avoid damage.
Soldering:
- Use a soldering iron with a temperature no higher than 300°C.
- Complete soldering within 10 seconds to avoid thermal stress on the transistor.
Handling:
- Handle the transistor by the body, not the leads, to minimize mechanical stress.
- Use anti-static wrist straps and mats to prevent electrostatic discharge (ESD).
Inquiry - BCT2827C