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2SK3397

Specifications

SKU: 1886419

BUY 2SK3397 https://www.utsource.net/itm/p/1886419.html
MOSFETs - Nch VDSS=30V; Surface Mount Type: N; Package: TFP; R DS On (max 0.006); I_S (A): (max 70)
Description: 2SK3397 is a N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) manufactured by Toshiba. Features: Low On-Resistance: RDS(on) = 0.085 Ω (max) High Speed Switching: tD(on) = 0.3 μs (typ) Low Gate Threshold Voltage: VGS(th) = 2.5 V (max) Low Input Capacitance: Ciss = 5.2 pF (typ) Low Output Capacitance: Coss = 0.3 pF (typ) High Avalanche Energy: EAS = 11 mJ (typ) High Power Dissipation: PD = 500 mW (max) Applications: 2SK3397 is suitable for high-speed switching applications such as DC-DC converters, motor drivers, and power supplies. It can also be used in audio amplifiers, switching regulators, and other high-frequency circuits. (For reference only)

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