Specifications
SKU: 1886505
Parameter | Description |
---|---|
Part Number | 2A20112 |
Type | Bipolar Junction Transistor (BJT) |
Polarity | NPN |
Collector-Emitter Voltage (Vce) | 50V |
Emitter-Base Voltage (Veb) | 5V |
Collector Current (Ic) | 1A |
Power Dissipation (Ptot) | 625mW |
Operating Temperature Range | -55°C to +150°C |
Storage Temperature Range | -65°C to +150°C |
Package Type | TO-92 |
Lead Finish | Tin Plated |
Instructions for Use
Handling Precautions:
- Handle the 2A20112 with care to avoid damage to the leads or body.
- Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.
Mounting:
- Ensure that the leads are not bent too close to the body to avoid mechanical stress.
- Soldering should be done at a temperature not exceeding 300°C for no more than 10 seconds per joint.
- Allow the transistor to cool down before handling after soldering.
Biasing:
- The base-emitter junction is forward-biased to turn the transistor on.
- The collector-emitter voltage should not exceed the maximum rated value of 50V.
- The collector current should not exceed 1A to avoid overheating and potential damage.
Thermal Management:
- If operating near the maximum power dissipation, consider using a heatsink to improve thermal performance.
- Ensure adequate ventilation or cooling to maintain the operating temperature within the specified range.
Testing:
- Use a multimeter to check the continuity and resistance between the leads.
- For functional testing, apply the appropriate bias voltages and measure the collector current to ensure the transistor is operating correctly.
Storage:
- Store the 2A20112 in a dry, cool place away from direct sunlight and sources of heat.
- Keep the components in their original packaging until ready for use to protect them from environmental factors.
Inquiry - 2A20112