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2A20112

Specifications

SKU: 1886505

BUY 2A20112 https://www.utsource.net/itm/p/1886505.html

Parameter Description
Part Number 2A20112
Type Bipolar Junction Transistor (BJT)
Polarity NPN
Collector-Emitter Voltage (Vce) 50V
Emitter-Base Voltage (Veb) 5V
Collector Current (Ic) 1A
Power Dissipation (Ptot) 625mW
Operating Temperature Range -55°C to +150°C
Storage Temperature Range -65°C to +150°C
Package Type TO-92
Lead Finish Tin Plated

Instructions for Use

  1. Handling Precautions:

    • Handle the 2A20112 with care to avoid damage to the leads or body.
    • Use proper ESD (Electrostatic Discharge) protection when handling to prevent damage from static electricity.
  2. Mounting:

    • Ensure that the leads are not bent too close to the body to avoid mechanical stress.
    • Soldering should be done at a temperature not exceeding 300°C for no more than 10 seconds per joint.
    • Allow the transistor to cool down before handling after soldering.
  3. Biasing:

    • The base-emitter junction is forward-biased to turn the transistor on.
    • The collector-emitter voltage should not exceed the maximum rated value of 50V.
    • The collector current should not exceed 1A to avoid overheating and potential damage.
  4. Thermal Management:

    • If operating near the maximum power dissipation, consider using a heatsink to improve thermal performance.
    • Ensure adequate ventilation or cooling to maintain the operating temperature within the specified range.
  5. Testing:

    • Use a multimeter to check the continuity and resistance between the leads.
    • For functional testing, apply the appropriate bias voltages and measure the collector current to ensure the transistor is operating correctly.
  6. Storage:

    • Store the 2A20112 in a dry, cool place away from direct sunlight and sources of heat.
    • Keep the components in their original packaging until ready for use to protect them from environmental factors.
(For reference only)

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