Specifications
SKU: 1887689
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
Parameter | Symbol | Min | Typical | Max | Unit | Notes |
---|---|---|---|---|---|---|
Breakdown Voltage | V(BR)DSS | - | 1200 | - | V | |
Forward Transconductance | gFS | 24 | - | - | S | @ VGS = 10V, ID = 10A |
On-State Resistance | RDS(on) | - | 65 | - | mΩ | @ VGS = 10V, ID = 25A |
Gate Charge | QG | - | 130 | - | nC | |
Input Capacitance | Ciss | - | 4800 | - | pF | @ VDS = 600V, f = 1MHz |
Output Capacitance | Coss | - | 1000 | - | pF | @ VDS = 600V, f = 1MHz |
Reverse Transfer Capacitance | Crss | - | 1200 | - | pF | @ VDS = 600V, f = 1MHz |
Continuous Drain Current | ID | - | 25 | - | A | @ Tc = 25°C |
Pulse Drain Current | IGM | - | 100 | - | A | tP = 10μs, ΔTj ≤ 100°C |
Maximum Gate-Source Voltage | VGS | -20 | - | 20 | V | |
Junction Temperature | Tj | -55 | - | 175 | °C | |
Storage Temperature | Tstg | -55 | - | 150 | °C |
Instructions for Use:
Mounting and Handling:
- Ensure proper handling to avoid damage to the device.
- Use appropriate thermal management techniques to keep the junction temperature within the specified range.
Biasing and Operation:
- Apply gate-source voltage (VGS) within the specified limits to avoid damage.
- Ensure the drain current (ID) does not exceed the continuous or pulse ratings.
- Keep the device within the specified temperature ranges during operation and storage.
Gate Drive:
- Use a low impedance driver to minimize switching losses.
- Ensure the gate charge (QG) is properly managed to optimize switching performance.
Thermal Management:
- Use a heatsink if necessary to maintain the junction temperature below the maximum rating.
- Monitor the temperature during operation to prevent overheating.
Capacitance Considerations:
- Account for input (Ciss), output (Coss), and reverse transfer (Crss) capacitances in circuit design to ensure stable operation.
Storage:
- Store the device in a dry, cool environment to prevent moisture damage.
- Follow ESD (Electrostatic Discharge) precautions to avoid damage to the device.
Testing:
- Use appropriate test equipment and procedures to verify the device parameters.
- Ensure that all tests are performed within the specified conditions to obtain accurate results.
Inquiry - MGY25N120D