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NGD8201N

Specifications

SKU: 1891171

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Ignition IGBT
The NGD8201N is an N-channel enhancement mode MOSFET produced by ON Semiconductor. It has an RDS(on) of 0.54 Ω and a VGS of -3.3 V. This MOSFET is designed for use in consumer and industrial applications, including DC/DC converters, lighting, and motor control. It is packaged in a standard TO-252 form factor. This MOSFET is ideal for use in low-voltage, low-current applications. (For reference only)

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