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KTN2907AS

Specifications

SKU: 1891650

BUY KTN2907AS https://www.utsource.net/itm/p/1891650.html
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)
Parameter Symbol Conditions Min Typical Max Unit
Forward Voltage Vf IF = 20mA - 1.8 2.3 V
Reverse Breakdown Voltage Vr IR = 5μA - - 5 V
Continuous Forward Current If Ta = 25°C, Pulse Width ≤ 1s - 20 30 mA
Peak Forward Current Ifsm Tp = 10ms, Duty Cycle ≤ 1/10 - - 100 mA
Operating Temperature Topr - -40 - 85 °C
Storage Temperature Tstg - -40 - 100 °C

Instructions for Use:

  1. Mounting:

    • Ensure that the mounting surface is clean and free from contaminants.
    • Use appropriate soldering techniques to avoid overheating the device.
    • Soldering temperature should not exceed 260°C for more than 10 seconds.
  2. Handling:

    • Handle with care to avoid mechanical damage.
    • Use static-protective equipment to prevent electrostatic discharge (ESD) damage.
  3. Electrical Connections:

    • Connect the anode and cathode terminals correctly to avoid reverse polarity.
    • Ensure that the current through the diode does not exceed the maximum ratings.
  4. Thermal Management:

    • For applications where the diode will operate near its maximum current, consider using a heat sink to maintain the operating temperature within the specified range.
  5. Environmental Considerations:

    • Store the device in a dry, cool place away from direct sunlight.
    • Avoid exposure to corrosive or abrasive materials.
  6. Testing:

    • Use a multimeter to verify the forward and reverse characteristics of the diode before installation.
    • Test the circuit under normal operating conditions to ensure proper functionality.
  7. Disposal:

    • Dispose of the device according to local environmental regulations.
(For reference only)

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