Specifications
SKU: 1891650
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING)
Parameter | Symbol | Conditions | Min | Typical | Max | Unit |
---|---|---|---|---|---|---|
Forward Voltage | Vf | IF = 20mA | - | 1.8 | 2.3 | V |
Reverse Breakdown Voltage | Vr | IR = 5μA | - | - | 5 | V |
Continuous Forward Current | If | Ta = 25°C, Pulse Width ≤ 1s | - | 20 | 30 | mA |
Peak Forward Current | Ifsm | Tp = 10ms, Duty Cycle ≤ 1/10 | - | - | 100 | mA |
Operating Temperature | Topr | - | -40 | - | 85 | °C |
Storage Temperature | Tstg | - | -40 | - | 100 | °C |
Instructions for Use:
Mounting:
- Ensure that the mounting surface is clean and free from contaminants.
- Use appropriate soldering techniques to avoid overheating the device.
- Soldering temperature should not exceed 260°C for more than 10 seconds.
Handling:
- Handle with care to avoid mechanical damage.
- Use static-protective equipment to prevent electrostatic discharge (ESD) damage.
Electrical Connections:
- Connect the anode and cathode terminals correctly to avoid reverse polarity.
- Ensure that the current through the diode does not exceed the maximum ratings.
Thermal Management:
- For applications where the diode will operate near its maximum current, consider using a heat sink to maintain the operating temperature within the specified range.
Environmental Considerations:
- Store the device in a dry, cool place away from direct sunlight.
- Avoid exposure to corrosive or abrasive materials.
Testing:
- Use a multimeter to verify the forward and reverse characteristics of the diode before installation.
- Test the circuit under normal operating conditions to ensure proper functionality.
Disposal:
- Dispose of the device according to local environmental regulations.
Inquiry - KTN2907AS