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Specifications
SKU: 1900864
85V/6A, AF 35W Output Applications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 0, IE = 0 | - | 60 | - | V |
| Emitter-Base Breakdown Voltage | V(BR)EBO | IC = 0, IE = 0 | - | 5 | - | V |
| Collector Current (Continuous) | IC | Tc = 25°C | - | 1 | - | A |
| Collector Current (Pulse) | ICM | Tc = 25°C, t = 1 ms | - | 3 | - | A |
| Power Dissipation | PD | Tc = 25°C | - | 625 | - | mW |
| Forward Current Transfer Ratio | hFE | IC = 10 mA, VCE = 5 V | 30 | 100 | - | - |
| Base-Emitter Saturation Voltage | VBE(sat) | IC = 10 mA, IB = 1 mA | - | 1.2 | - | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC = 10 mA, IB = 1 mA | - | 0.3 | - | V |
| Storage Temperature Range | Tstg | - | -40 | - | 150 | °C |
Instructions for Use:
- Mounting: Ensure that the 2SB775 is securely mounted to prevent mechanical stress on the leads.
- Heat Dissipation: The device can dissipate up to 625 mW at 25°C. For higher power applications, ensure adequate heat sinking.
- Biasing: When biasing the transistor, ensure that the base current (IB) is sufficient to keep the transistor in saturation if used as a switch. For linear applications, operate within the specified hFE range.
- Overvoltage Protection: Do not exceed the maximum collector-emitter breakdown voltage (V(BR)CEO) of 60V or the emitter-base breakdown voltage (V(BR)EBO) of 5V.
- Current Limiting: Use appropriate resistors to limit the collector current (IC) to within the continuous rating of 1A and the pulse rating of 3A.
- Storage: Store the device in a dry environment within the temperature range of -40°C to 150°C.
- Handling: Handle the device with care to avoid static discharge, which can damage the sensitive components.
Pin Configuration:
- Collector (C): Lead 1
- Base (B): Lead 2
- Emitter (E): Lead 3
Packaging:
- Case Type: TO-92
- Lead Pitch: 2.54 mm
Applications:
- Switching Circuits: Ideal for low-power switching applications.
- Signal Amplification: Suitable for amplifying small signals in audio and RF circuits.
- Protection Circuits: Can be used in overcurrent protection circuits.
Inquiry - 2SB775
