BUY IRG4RC10S https://www.utsource.net/itm/p/1904692.html
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A)
Description: The IRG4RC10S is an insulated gate bipolar transistor (IGBT) module from International Rectifier. It is a high-speed switching device with low on-state voltage drop and low gate drive power. Features: Low on-state voltage drop Low gate drive power High-speed switching High surge current capability Low thermal resistance Low noise Applications: The IRG4RC10S is suitable for use in high-speed switching applications such as motor drives, power supplies, and UPS systems. It can also be used in high-power switching applications such as welding, induction heating, and lighting. (For reference only)